1 - 2 ? 2000 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m 500 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 21n50 21 a 24n50 24 a 26n50 26 a i dm t c = 25 c, pulse width limited by t jm 21n50 84 a 24n50 96 a 26n50 104 a i ar t c = 25 c 21n50 21 a 24n50 24 a 26n50 26 a e ar t c = 25 c30mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-204 = 18 g, to-247 = 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 4 ma 2 4 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 ? v dss t j = 25 c 200 a v gs = 0 v t j = 125 c1ma n-channel enhancement mode high dv/dt, low t rr , hdmos tm family to-247 ad (ixfh) to-204 ae (ixfm) d g features international standard packages low r ds (on) hdmos tm process rugged polysilicon gate cell structure unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect fast intrinsic rectifier applications dc-dc converters synchronous rectification battery chargers switched-mode and resonant-mode power supplies dc choppers ac motor control temperature and lighting controls low voltage relays advantages easy to mount with 1 screw (to-247) (isolated mounting screw hole) high power surface mountable package high power density g = gate, d = drain, s = source, tab = drain 91525h (9/99) (tab) v dss i d25 r ds(on) ixfh/ixfm21n50 500 v 21 a 0.25 ixfh/ixfm/ixft24n50 500 v 24 a 0.23 ixfh/ixft26n50 500 v 26 a 0.20 t rr 250 ns hiperfet tm power mosfets to-268 (d3) case style (tab) g s ixys reserves the right to change limits, test conditions, and dimensions.
2 - 2 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. r ds(on) v gs = 10 v, i d = 0.5 i d25 21n50 0.25 24n50 0.23 26n50 0.20 pulse test, t 300 s, duty cycle d 2 % g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 11 21 s c iss 4200 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 450 pf c rss 135 pf t d(on) 16 25 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 33 45 ns t d(off) r g = 2 (external) 65 80 ns t f 30 40 ns q g(on) 135 160 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 28 40 nc q gd 62 85 nc r thjc 0.42 k/w r thck (to-247 case style) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 21n50 21 a 24n50 24 a 26n50 26 a i sm repetitive; 21n50 84 a pulse width limited by t jm 24n50 96 a 26n50 104 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr t j = 25 c 250 ns t j = 125 c 400 ns q rm t j = 25 c1 c t j = 125 c2 c i rm t j = 25 c10a t j = 125 c15a i f = i s -di/dt = 100 a/ s, v r = 100 v to-247 ad (ixfh) outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 to-204 ae (ixfm) outline dim. millimeter inches min. max. min. max. a 38.61 39.12 1.520 1.540 b - 22.22 - 0.875 c 6.40 11.40 0.252 0.449 d 1.45 1.60 0.057 0.063 e 1.52 3.43 0.060 0.135 f 30.15 bsc 1.187 bsc g 10.67 11.17 0.420 0.440 h 5.21 5.71 0.205 0.225 j 16.64 17.14 0.655 0.675 k 11.18 12.19 0.440 0.480 q 3.84 4.19 0.151 0.165 r 25.16 26.66 0.991 1.050 dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 min. recommended footprint to-268aa (d 3 pak) ixfh/ixfm21n50 ixfh/ixfm24n50 ixft24n50 ixfh26n50 ixft26n50 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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